发明授权
- 专利标题： Imprint lithography mask trimming for imprint mask using etch
- 专利标题（中）： 使用蚀刻的压印掩模的压印光刻掩模修剪
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申请号： US10909464申请日： 2004-08-02
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公开(公告)号： US07384569B1公开(公告)日： 2008-06-10
- 发明人: Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
- 申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Amin, Turocy & Calvin, LLP
- 主分类号： G01L21/30
- IPC分类号： G01L21/30 ; H01L21/00
摘要：
Disclosed are photolithographic systems and methods, and more particularly systems and methodologies that enhance imprint mask feature resolution. An aspect generates feedback information that facilitates control of imprint mask feature size and resolution via employing a scatterometry system to detect resolution enhancement need, and decreasing imprint mask feature size and increasing resolution of the imprint mask via a trim etch procedure.
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