发明授权
US07384713B2 Exposure mask blank manufacturing method and exposure mask manufacturing method
有权
曝光掩模坯料制造方法和曝光掩模制造方法
- 专利标题: Exposure mask blank manufacturing method and exposure mask manufacturing method
- 专利标题(中): 曝光掩模坯料制造方法和曝光掩模制造方法
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申请号: US10853532申请日: 2004-05-26
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公开(公告)号: US07384713B2公开(公告)日: 2008-06-10
- 发明人: Masamitsu Itoh
- 申请人: Masamitsu Itoh
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2003-155936 20030530
- 主分类号: G03F1/00
- IPC分类号: G03F1/00
摘要:
A method of manufacturing an exposure mask blank including a substrate and a light-shielding film formed on the substrate, comprising measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film, predicting, on the basis of the first flatness, a second flatness of each substrate when chucked on an exposure apparatus, selecting from the plurality of substrates, at least one substrate having a predetermined flatness on the basis of the second flatness, predicting a desired third flatness of the at least one substrate after a light-shielding film is formed on the substrate, forming a light-shielding film on the selected at least one substrate, measuring a fourth flatness of the at least one substrate having the formed light-shielding film, and determining whether the at least one substrate having the light-shielding film has the desired third flatness by comparing the fourth flatness with the third flatness.
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