发明授权
- 专利标题: Image display device and method for manufacturing the same
- 专利标题(中): 图像显示装置及其制造方法
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申请号: US11441021申请日: 2006-05-26
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公开(公告)号: US07384810B2公开(公告)日: 2008-06-10
- 发明人: Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
- 申请人: Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
- 申请人地址: JP Hayano Mobara-Shi
- 专利权人: Hitachi Displays, Ltd.
- 当前专利权人: Hitachi Displays, Ltd.
- 当前专利权人地址: JP Hayano Mobara-Shi
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-153734 20050526
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
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