发明授权
- 专利标题： Method and apparatus for the production of silicon carbide crystals
- 专利标题（中）： 用于生产碳化硅晶体的方法和装置
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申请号： US11128447申请日： 2005-05-13
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公开(公告)号： US07387680B2公开(公告)日： 2008-06-17
- 发明人: Valeri F. Tsvetkov , David P. Malta
- 申请人： Valeri F. Tsvetkov , David P. Malta
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Summa, Allan & Addition, P.A.
- 主分类号： C30B23/04
- IPC分类号： C30B23/04 ; C30B23/06
摘要：
A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form a plurality of silicon carbide crystal plates. The silicon carbide crystal plates can be used as seed crystals in subsequent sublimation steps in a manner that promotes the growth of silicon carbide crystals in different crystallographic directions to thereby terminate defect formation.
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