Invention Grant
- Patent Title: Charged-particle beam exposure apparatus and method
- Patent Title (中): 带电粒子束曝光装置及方法
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Application No.: US11315303Application Date: 2005-12-23
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Publication No.: US07388214B2Publication Date: 2008-06-17
- Inventor: Takashi Maeda
- Applicant: Takashi Maeda
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-378665 20041228
- Main IPC: G21K5/04
- IPC: G21K5/04

Abstract:
A charged particle beam exposure apparatus which splits a charged-particle beam from a charged-particle beam source into a plurality of charged-particle beams by a plurality of apertures formed in an aperture array to expose a wafer using the plurality of charged-particle beams. The apparatus includes a stage on which the wafer is loaded, the wafer being irradiated with the plurality of charged-particle beams, which have been passed through the apertures of the aperture array, a plurality of detection electrodes which detect intensities of the plurality of charged-particle beams passing through the plurality of apertures of the aperture array to expose the wafer with the plurality of charged-particle beams, the plurality of detection electrodes being formed on the charged-particle beam source side of the light-shielding peripheral regions of the plurality of apertures of the aperture array, and a grid array which adjusts the intensities of the plurality of charged-particle beams on the basis of detection results obtained by the plurality of detection electrodes.
Public/Granted literature
- US20060138359A1 Charged-particle beam exposure apparatus and method Public/Granted day:2006-06-29
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