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US07388214B2 Charged-particle beam exposure apparatus and method 失效
带电粒子束曝光装置及方法

Charged-particle beam exposure apparatus and method
Abstract:
A charged particle beam exposure apparatus which splits a charged-particle beam from a charged-particle beam source into a plurality of charged-particle beams by a plurality of apertures formed in an aperture array to expose a wafer using the plurality of charged-particle beams. The apparatus includes a stage on which the wafer is loaded, the wafer being irradiated with the plurality of charged-particle beams, which have been passed through the apertures of the aperture array, a plurality of detection electrodes which detect intensities of the plurality of charged-particle beams passing through the plurality of apertures of the aperture array to expose the wafer with the plurality of charged-particle beams, the plurality of detection electrodes being formed on the charged-particle beam source side of the light-shielding peripheral regions of the plurality of apertures of the aperture array, and a grid array which adjusts the intensities of the plurality of charged-particle beams on the basis of detection results obtained by the plurality of detection electrodes.
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