发明授权
- 专利标题: Error detection and correction scheme for a memory device
- 专利标题(中): 存储器件的错误检测和校正方案
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申请号: US10769001申请日: 2004-01-30
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公开(公告)号: US07389465B2公开(公告)日: 2008-06-17
- 发明人: William H. Radke , Shuba Swaminathan , Brady L. Keays
- 申请人: William H. Radke , Shuba Swaminathan , Brady L. Keays
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert, Jay & Polglaze, P.A.
- 主分类号: G11C16/06
- IPC分类号: G11C16/06 ; H03M13/29
摘要:
Data is read from a memory array. Before being stored in a data buffer, a Hamming code detection operation and a Reed-Solomon code detection operation are operated in parallel to determine if the data word has any errors. The results of the parallel detection operations are communicated to a controller circuit. If an error is present that can be corrected by the Hamming code correction operation, this is performed and the Reed-Solomon code detection operation is performed on the corrected word. If the error is uncorrectable by the Hamming code, the Reed-Solomon code correction operation is performed on the word.
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