发明授权
- 专利标题: Electron beam control method, electron beam drawing apparatus and method of fabricating a semiconductor device
- 专利标题(中): 电子束控制方法,电子束描绘装置和半导体装置的制造方法
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申请号: US11260254申请日: 2005-10-28
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公开(公告)号: US07397053B2公开(公告)日: 2008-07-08
- 发明人: Hiroyuki Mizuno
- 申请人: Hiroyuki Mizuno
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2004-314076 20041028
- 主分类号: H01J49/00
- IPC分类号: H01J49/00
摘要:
An electron beam control method has the following steps, selecting one of a plurality of pattern openings by a character beam electrode having a plurality of electrode units to allow an electron beam to pass through any pattern opening on an aperture mask on which the plurality of pattern openings are formed, determining whether or not a synchronization error of deflected operation of the electron beam performed by the plurality of electrode units is equal to or less than a tolerance, determining whether or not the electron beam is irradiated with a sample by selecting the pattern openings in sequence by the character beam electrode in a state of controlling a path of the electron beam by a blanking electrode not to irradiate the sample with the electron beam, when determined that the synchronization error is equal to or less than the tolerance, and decreasing the tolerance when determined that the electron beam is irradiated with the sample.
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