A method for operating a charge-trapping multi-level cell (“MLC”) memory array comprises programming a first plurality of charge-trapping sites to a preliminary first-level value, programming a second plurality of charge-trapping sites to a preliminary second-level value, and programming a third plurality of charge-trapping sites to a final third-level value using a first programming scheme. Then, the first plurality of charge-trapping sites is programmed to a final first-level value and the second plurality of charge-trapping sites is programmed to a final second-level value using a second programming scheme.