发明授权
- 专利标题: Crucible and method of growing single crystal by using crucible
- 专利标题(中): 使用坩埚生长单晶的坩埚和方法
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申请号: US10563087申请日: 2004-06-18
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公开(公告)号: US07399360B2公开(公告)日: 2008-07-15
- 发明人: Keiji Sumiya , Nachimuthu Senguttuvan , Hiroyuki Ishibashi
- 申请人: Keiji Sumiya , Nachimuthu Senguttuvan , Hiroyuki Ishibashi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Chemical Company, Ltd.
- 当前专利权人: Hitachi Chemical Company, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2003-270771 20030703; JP2003-270773 20030703; JP2003-270774 20030703; JP2003-270778 20030703; JP2003-284047 20030731; JP2003-336015 20030926
- 国际申请: PCT/JP2004/008624 WO 20040618
- 国际公布: WO2005/003413 WO 20050113
- 主分类号: C30B11/00
- IPC分类号: C30B11/00 ; C30B29/12
摘要:
Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.
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