发明授权
- 专利标题： Semiconductor light-emitting device and fabrication method thereof
- 专利标题（中）： 半导体发光器件及其制造方法
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申请号： US10577722申请日： 2004-09-27
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公开(公告)号： US07399649B2公开(公告)日： 2008-07-15
- 发明人: Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kiyofumi Chikuma
- 申请人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kiyofumi Chikuma
- 申请人地址： JP Tokyo
- 专利权人： Pioneer Corporation
- 当前专利权人： Pioneer Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Arent Fox LLP
- 优先权： JP2003-374609 20031104
- 国际申请： PCT/JP2004/014087 WO 20040927
- 国际公布： WO2005/043633 WO 20050512
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.