发明授权
US07402862B2 Multi-bit non-volatile memory device having a dual-gate and method of manufacturing the same, and method of multi-bit cell operation
有权
具有双栅极的多位非易失性存储器件及其制造方法以及多位元单元操作的方法
- 专利标题： Multi-bit non-volatile memory device having a dual-gate and method of manufacturing the same, and method of multi-bit cell operation
- 专利标题（中）： 具有双栅极的多位非易失性存储器件及其制造方法以及多位元单元操作的方法
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申请号： US11379723申请日： 2006-04-21
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公开(公告)号： US07402862B2公开(公告)日： 2008-07-22
- 发明人: Yang-Kyu Choi , Hyunjin Lee
- 申请人： Yang-Kyu Choi , Hyunjin Lee
- 申请人地址： KR Daejeon
- 专利权人： Korea Advanced Institute of Science and Technology
- 当前专利权人： Korea Advanced Institute of Science and Technology
- 当前专利权人地址： KR Daejeon
- 代理机构： Abelman, Frayne & Schwab
- 代理商 Harry K. Ahn
- 优先权： KR10-2005-0033697 20050422
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
The present invention relates to a multi-bit non-volatile memory device having a dual gate employing local charge trap and method of manufacturing the same, and an operating method for a multi-bit cell operation.
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