发明授权
- 专利标题： Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit
- 专利标题（中）： 测量磁存储单元磁滞曲线和各向异性能的方法
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申请号： US11529225申请日： 2006-09-29
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公开(公告)号： US07403414B2公开(公告)日： 2008-07-22
- 发明人: Te-Ho Wu , Lin-Hsiu Ye , Jia-Mou Lee , Ming-Chi Weng
- 申请人： Te-Ho Wu , Lin-Hsiu Ye , Jia-Mou Lee , Ming-Chi Weng
- 申请人地址： TW Yunlin
- 专利权人： National Yunlin University of Science and Technology
- 当前专利权人： National Yunlin University of Science and Technology
- 当前专利权人地址： TW Yunlin
- 代理机构： Rosenberg, Klein & Lee
- 优先权： TW95109489A 20060320
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall effect, and recording the variation of the Hall voltage to obtain the hysteresis curve and anisotropic energy with specific instruments, and calculating the individual anisotropic energy value of the magnetic material of the single-layer or the multilayer magnetic structure.