发明授权
US07405167B2 Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same
有权
制造非易失性有机存储装置的方法和由其制造的非易失性有机存储装置
- 专利标题: Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same
- 专利标题(中): 制造非易失性有机存储装置的方法和由其制造的非易失性有机存储装置
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申请号: US11214724申请日: 2005-08-31
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公开(公告)号: US07405167B2公开(公告)日: 2008-07-29
- 发明人: Yoon Sok Kang , Sang Kyun Lee , Won Jae Joo , Kwang Hee Lee
- 申请人: Yoon Sok Kang , Sang Kyun Lee , Won Jae Joo , Kwang Hee Lee
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: KR10-2004-0111926 20041224
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469
摘要:
A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two electrode layers and then reducing the ions of conductive nanoparticles into conductive nanoparticles in the organic material to form a desired memory layer. In addition, a nonvolatile organic memory device manufactured by the method of the current invention is also provided. The method allows the memory device to be manufactured using a rapid, simple, and environmentally friendly process, without the need for an encapsulation process. As well, the memory device has a low operating voltage, and hence, is suitable for application to various portable electronic devices that must have low power consumption.
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