发明授权
US07405481B2 Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated circuit chip
有权
用于在集成电路芯片中的导电线和蚀刻停止层之间的粘附改善的胶层
- 专利标题： Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated circuit chip
- 专利标题（中）： 用于在集成电路芯片中的导电线和蚀刻停止层之间的粘附改善的胶层
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申请号： US11004065申请日： 2004-12-03
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公开(公告)号： US07405481B2公开(公告)日： 2008-07-29
- 发明人: Keng-Chu Lin , Yung-Cheng Lu , Shwang-Ming Cheng
- 申请人： Keng-Chu Lin , Yung-Cheng Lu , Shwang-Ming Cheng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
In an integrated circuit chip, a conductive line is formed in a first IMD layer. The conductive line is formed of a conductive line material that tends to form an oxide when exposed to an oxygen-containing substance. A glue layer is formed on the conductive line. The glue layer is formed of a non-oxygen-containing material capable of providing an oxygen barrier over the conductive line. The glue layer has a hardness greater than that of the conductive line. The glue layer preferably has a thickness between about 15 angstroms and about 75 angstroms. The etch stop layer is formed on the glue layer. The etch stop layer has a hardness greater than that of the glue layer. A second IMD layer is formed on the etch stop layer. The etch stop layer and/or the second IMD layer may be formed with a material comprising oxygen without oxidizing the conductive line.
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