Invention Grant
- Patent Title: Dynamic data restore in thyristor-based memory device
- Patent Title (中): 基于晶闸管的存储器件中的动态数据恢复
-
Application No.: US11361334Application Date: 2006-02-24
-
Publication No.: US07405963B2Publication Date: 2008-07-29
- Inventor: Farid Nemati , Hyun-Jin Cho , Robert Homan Igehy
- Applicant: Farid Nemati , Hyun-Jin Cho , Robert Homan Igehy
- Applicant Address: US CA Milpitas
- Assignee: T-RAM Semiconductor, Inc.
- Current Assignee: T-RAM Semiconductor, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Fields IP, PS
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the internal positive feedback loop in the thyristor is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.
Public/Granted literature
- US20060139996A1 Dynamic data restore in thyristor-based memory device Public/Granted day:2006-06-29
Information query