发明授权
- 专利标题： Low resistance contact structure and fabrication thereof
- 专利标题（中）： 低电阻接触结构及其制造
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申请号： US11470349申请日： 2006-09-06
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公开(公告)号： US07407875B2公开(公告)日： 2008-08-05
- 发明人: Keith Kwong Hon Wong , Patrick W. DeHaven , Sadanand V. Deshpande , Anita Madan
- 申请人： Keith Kwong Hon Wong , Patrick W. DeHaven , Sadanand V. Deshpande , Anita Madan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Yuanmin Cai
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/44
摘要：
Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.
公开/授权文献
- US20080054326A1 LOW RESISTANCE CONTACT STRUCTURE AND FABRICATION THEREOF 公开/授权日：2008-03-06