- 专利标题: Semiconductor device
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申请号: US11841841申请日: 2007-08-20
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公开(公告)号: US07410855B2公开(公告)日: 2008-08-12
- 发明人: Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
- 申请人: Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.
公开/授权文献
- US20070298560A1 Semiconductor Device 公开/授权日:2007-12-27