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发明授权
US07411830B2 Nonvolatile memory cell having current compensated for temperature dependency and data read method thereof 有权
具有电流补偿温度依赖性和数据读取方法的非易失性存储单元

Nonvolatile memory cell having current compensated for temperature dependency and data read method thereof
摘要：
A nonvolatile semiconductor memory device includes a memory cell array, read circuit, program circuit, read voltage generating circuit, memory circuit and switching circuit. The read voltage generating circuit generates and supplies a read voltage to the read circuit. The memory circuit stores information which changes the temperature characteristic of a memory cell in the memory cell array. The switching circuit changes the temperature dependency of read voltage generated from the read voltage generating circuit based on information stored in the memory circuit.
摘要（中）：

非易失性半导体存储器件包括存储单元阵列，读取电路，程序电路，读取电压产生电路，存储器电路和开关电路。 读取电压产生电路产生读取电压并将读取电压提供给读取电路。 存储电路存储改变存储单元阵列中的存储单元的温度特性的信息。 开关电路基于存储在存储器电路中的信息改变从读取电压产生电路产生的读取电压的温度依赖性。

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