发明授权
- 专利标题: Double-sided etching method using embedded alignment mark
- 专利标题(中): 双面蚀刻方法采用嵌入式对准标记
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申请号: US11528619申请日: 2006-09-28
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公开(公告)号: US07413920B2公开(公告)日: 2008-08-19
- 发明人: Young-chul Ko , Hyun-ku Jeong
- 申请人: Young-chul Ko , Hyun-ku Jeong
- 申请人地址: KR Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2005-0116636 20051201
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A double-sided etching method using an embedded alignment mark includes: preparing a substrate having first and second alignment marks embedded in an intermediate portion thereof; etching an upper portion of the substrate so as to expose the first alignment mark from a first surface of the substrate; etching the upper portion of the substrate using the exposed first alignment mark; etching a lower portion of the substrate so as to expose the second alignment mark from a second surface of the substrate; and etching the lower portion of the substrate using the exposed second alignment mark.
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