发明授权
- 专利标题: Beam exposure correction system and method
- 专利标题(中): 光束曝光校正系统及方法
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申请号: US11237554申请日: 2005-09-28
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公开(公告)号: US07417233B2公开(公告)日: 2008-08-26
- 发明人: Scott C. Stovall , Benyamin Buller , Jimmy Iskandar , Ming Lun Yu
- 申请人: Scott C. Stovall , Benyamin Buller , Jimmy Iskandar , Ming Lun Yu
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理商 Shirley L. Church
- 主分类号: G21K1/08
- IPC分类号: G21K1/08
摘要:
A system and method of determining shape and position corrections of a beam such as a particle or other beam used in a system such as a particle beam lithography. The method of providing corrected deflector voltages may include determining a voltage step value by subtracting a previous deflector voltage value with a current deflector voltage value; determining a plurality of correction values using the voltage step value and an exposure time for the current deflector voltage value; selecting a current voltage correction value from the plurality of correction values using the current deflector voltage value; and calculating a corrected deflector voltage value by adding the current voltage correction value to the current deflector voltage value.
公开/授权文献
- US20070069151A1 Beam exposure correction system and method 公开/授权日:2007-03-29
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