发明授权
US07418542B2 Rewritable, nonvolatile memory, electronic device, method of rewriting rewritable, nonvolatile memory, and storage medium having stored thereon rewrite program
有权
可重写的非易失性存储器，电子设备，重写可重写的方法，非易失性存储器和存储在其上的存储介质重写程序
- 专利标题： Rewritable, nonvolatile memory, electronic device, method of rewriting rewritable, nonvolatile memory, and storage medium having stored thereon rewrite program
- 专利标题（中）： 可重写的非易失性存储器，电子设备，重写可重写的方法，非易失性存储器和存储在其上的存储介质重写程序
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申请号： US11246788申请日： 2005-10-11
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公开(公告)号： US07418542B2公开(公告)日： 2008-08-26
- 发明人: Atsushi Ogo , Shuhji Fujii
- 申请人： Atsushi Ogo , Shuhji Fujii
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye, PC
- 优先权： JP2004-300785 20041014
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F9/44
摘要：
A rewritable, nonvolatile memory includes a first region having stored therein a processing program which allows an electronic device to perform a process, and having a first specific portion which is accessed first upon boot-up by the electronic device; and a second region having stored therein a boot program and a rewrite program. Upon erasing storage contents of the first region, the storage contents of the first region are erased by the rewrite program such that a storage content of the first specific portion is erased last. Upon writing storage contents into the first region, new storage contents are written into the first region by the rewrite program such that a storage content of the first specific portion is written first.
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