发明授权
- 专利标题: Method of fabricating nanoimprint mold
- 专利标题(中): 制造纳米压印模具的方法
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申请号: US11505395申请日: 2006-08-17
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公开(公告)号: US07419764B2公开(公告)日: 2008-09-02
- 发明人: Jong Hyurk Park , Hyo Young Lee , Nak Jin Choi , Jung Hyun Lee , Gyeong Sook Bang
- 申请人: Jong Hyurk Park , Hyo Young Lee , Nak Jin Choi , Jung Hyun Lee , Gyeong Sook Bang
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Lowe Hauptman Ham & Berner LLP
- 优先权: KR10-2005-0118792 20051207; KR10-2006-0025683 20060321
- 主分类号: G03C5/00
- IPC分类号: G03C5/00
摘要:
Provided is a method of fabricating a nanoimprint mold which can form sub-100 nm fine pattern structures. The method includes forming patterns on a first substrate using an E-beam lithography (EBL) process, and transferring the patterns formed on the first substrate to a second substrate using a nanoimprint lithography (NIL) process to complete an NIL mold. Accordingly, the method can easily fabricate the nanoimprint mold at low costs on a quartz or glass substrate, which is not suitable for an EBL process to produce sub-100 nm patterns, by utilizing the advantages of the EBL process with a resolution of tens of nanometers.
公开/授权文献
- US20070128549A1 Method of fabricating nanoimprint mold 公开/授权日:2007-06-07
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