发明授权
US07420249B2 Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
失效
在半导体层中形成的半导体器件，其布置在基板上，绝缘膜和空腔中的一个介于基板和半导体层之间
- 专利标题： Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
- 专利标题（中）： 在半导体层中形成的半导体器件，其布置在基板上，绝缘膜和空腔中的一个介于基板和半导体层之间
-
申请号： US11849682申请日： 2007-09-04
-
公开(公告)号： US07420249B2公开(公告)日： 2008-09-02
- 发明人: Tsutomu Sato , Hajime Nagano , Ichiro Mizushima , Takashi Yamada , Yuso Udo , Shinichi Nitta
- 申请人： Tsutomu Sato , Hajime Nagano , Ichiro Mizushima , Takashi Yamada , Yuso Udo , Shinichi Nitta
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-398184 20011227
- 主分类号： H01L27/01
- IPC分类号： H01L27/01 ; H01L27/12 ; H01L31/0392
摘要：
A semiconductor device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer surrounding the first semiconductor layer, the second semiconductor layer being formed on the semiconductor substrate with one of an insulating film and a cavity, and a third semiconductor layer surrounding the second semiconductor layer, the third semiconductor layer being formed on the semiconductor substrate.
公开/授权文献
信息查询
IPC分类:
