发明授权
- 专利标题： Semiconductor device having two-layered charge storage electrode
- 专利标题（中）： 具有两层电荷存储电极的半导体器件
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申请号： US11373982申请日： 2006-03-14
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公开(公告)号： US07420259B2公开(公告)日： 2008-09-02
- 发明人: Seiichi Mori , Mitsuhiro Noguchi
- 申请人： Seiichi Mori , Mitsuhiro Noguchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JPP2000-331407 20001030; JPP2001-324141 20011022
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/762
摘要：
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.