A device controls internal voltage. Increased reliability of a semiconductor memory device is obtained by increasing or decreasing a level of internal reference voltage according to change of the device. Fuse ROMs generate fuse signals having different levels according to a cutting condition of each fuse. A bit counter performs up/down counting operation in response to a count control signal after setting the fuse signals to initial values in response to a set signal and generates counter output signals which are higher or lower than the initial values by a counting number. A decoder decodes the counter output signals and activates one of switching signals. A reference voltage selector provides a trimming level of internal reference voltage in response to the switching signals and generating reference voltage.