发明授权
- 专利标题: Solid-state imaging element, solid-state imaging device, and method for fabricating the same
- 专利标题(中): 固态成像元件,固态成像器件及其制造方法
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申请号: US11011042申请日: 2004-12-15
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公开(公告)号: US07420610B2公开(公告)日: 2008-09-02
- 发明人: Kenji Orita , Shinichi Takigawa
- 申请人: Kenji Orita , Shinichi Takigawa
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 主分类号: H04N5/225
- IPC分类号: H04N5/225 ; H04N3/14 ; H04N5/335 ; H04N9/04 ; H04N9/083
摘要:
A solid state-imaging element including photoelectric conversion element and an optical element such as a photonic crystal is disclosed. The optical element is formed on the photoelectric conversion element, and has a refractive index periodic structure made up of stacked layers of materials with different refractive indices. The refractive index periodic structure is defined by multiple layers along a stacking direction and by a group of concentric similar shapes along an in-plane direction. The optical element may be fabricated via lithography and etching, or an autocloning technique. A solid state-imaging device including an arrangement of several solid-state imaging elements is also disclosed.
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