- 专利标题： Nonvolatile semiconductor memory device which stores multivalue data
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申请号： US11763743申请日： 2007-06-15
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公开(公告)号： US07420863B2公开(公告)日： 2008-09-02
- 发明人: Yasuhiko Honda , Masao Kuriyama
- 申请人： Yasuhiko Honda , Masao Kuriyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2005-114750 20050412
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A reference current generating circuit generates at least one reference current. A voltage generating circuit generates voltage. A sense amplifier compares a current caused to flow in a memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit. A control section is supplied with an output signal of the sense amplifier. When verifying the threshold voltage of the memory cell, the control section causes the voltage generating circuit to generate verify voltage which is the same as readout voltage generated at the time of data readout from the memory cell.
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