发明授权
- 专利标题： Methods of forming dielectric structures and capacitors
- 专利标题（中）： 形成电介质结构和电容器的方法
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申请号： US11059449申请日： 2005-02-17
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公开(公告)号： US07425493B2公开(公告)日： 2008-09-16
- 发明人: Kyoung-Ryul Yoon , Han-Mei Choi , Seung-Hwan Lee , Dae-Sik Choi , Ki-Yeon Park , Young-Sun Kim , Sung-Tae Kim , Cha-Young You
- 申请人： Kyoung-Ryul Yoon , Han-Mei Choi , Seung-Hwan Lee , Dae-Sik Choi , Ki-Yeon Park , Young-Sun Kim , Sung-Tae Kim , Cha-Young You
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR2002-48720 20020817; KR10-2004-98552 20041129; KR10-2004-0117785 20041231
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/31
摘要：
A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
公开/授权文献
- US20050170601A1 Methods of forming dielectric structures and capacitors 公开/授权日：2005-08-04