发明授权
- 专利标题： Polishing slurries for copper and associated materials
- 专利标题（中）： 抛光用于铜和相关材料的浆料
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申请号： US11145807申请日： 2005-06-06
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公开(公告)号： US07427567B2公开(公告)日： 2008-09-23
- 发明人: Willaim A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
- 申请人： Willaim A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Moore & Van Allen, PLLC
- 代理商 Chih-Sheng Lin; Tristan A. Fuierer
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
公开/授权文献
- US20060084272A1 Polishing slurries for copper and associated materials 公开/授权日：2006-04-20
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