发明授权
- 专利标题: Semiconductor light emitting device capable of increasing its brightness
- 专利标题(中): 能够提高其亮度的半导体发光器件
-
申请号: US10518798申请日: 2003-06-10
-
公开(公告)号: US07429757B2公开(公告)日: 2008-09-30
- 发明人: Toshihiko Oyama , Nobuo Kobayashi , Hideyuki Osawa , Toshio Ogata
- 申请人: Toshihiko Oyama , Nobuo Kobayashi , Hideyuki Osawa , Toshio Ogata
- 申请人地址: JP Saitama
- 专利权人: Sanken Electric Co., Ltd.
- 当前专利权人: Sanken Electric Co., Ltd.
- 当前专利权人地址: JP Saitama
- 代理机构: Bachman & LaPointe, P.C.
- 优先权: JP2002-179230 20020619; JP2002-179240 20020619; JP2002-179244 20020619; JP2002-179245 20020619
- 国际申请: PCT/JP03/07359 WO 20030610
- 国际公布: WO2004/001862 WO 20041231
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light emitting device comprises a metallic support plate 1; a light-reflective reflector 3 mounted on the support plate 1 and formed with a hole 3a; a semiconductor light emitting element 2 mounted on the support plate 1 within the hole 3a of the reflector 3, and a plastic encapsulant 6 for sealing an outer periphery of the reflector 3 and an upper surface 1c of the support plate 1. As the reflector 3 is electrically connected to a wiring conductor 5 or a lead wire 8 extends through a notch 3k formed in the reflector 3 to electrically connect the semiconductor light emitting element 2 and wiring conductor 5, wiring span of the lead wire 8 can be shortened to prevent deformation of the lead wire 8. Simultaneously, diameter of the reflective surface 3c in the reflector 3 is reduced and height of the reflector 3 is increased to improve directivity and axial brightness of light from the semiconductor light emitting device. Also, formation of the hole 3a effectively prevents further thermal degradation of heat-resistible plastic encapsulant 6 or other resin components.