发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11235246申请日： 2005-09-27
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公开(公告)号： US07429776B2公开(公告)日： 2008-09-30
- 发明人: Masato Koyama , Akira Nishiyama , Yoshinori Tsuchiya , Reika Ichihara
- 申请人： Masato Koyama , Akira Nishiyama , Yoshinori Tsuchiya , Reika Ichihara
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2005-059396 20050303
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.
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