Invention Grant
- Patent Title: Replica bias circuit
- Patent Title (中): 复制偏置电路
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Application No.: US11451962Application Date: 2006-06-13
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Publication No.: US07429874B2Publication Date: 2008-09-30
- Inventor: Sang Jin Byun , Hyun Kyu Yu
- Applicant: Sang Jin Byun , Hyun Kyu Yu
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Ladas & Parry LLP
- Priority: KR10-2005-0109054 20051115
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
Provided is a replica bias circuit which is suitable for multi-layer stacked CMOS current mode logic (CML) and is stably used in application fields using a low power supply voltage. The replica bias circuit applies a reference voltage to gates of target transistors constituting an electronic circuit. The replica bias circuit includes a sub threshold voltage generator for maintaining a voltage difference lower than a threshold voltage of the transistor; and a replica path including devices designed by referring to dimensions of constituent devices forming a current flow path, the current flow path including the target transistors in the electronic circuit. With the replica bias circuit, multi-layer stacked CMOS current mode logic (CML) circuits can stably operate even at a low power supply voltage.
Public/Granted literature
- US20070120600A1 Replica bias circuit Public/Granted day:2007-05-31
Information query
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