Invention Grant
US07432161B2 Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
有权
通过选择性外延生长制造垂直于（001）取向衬底的光学质量面
- Patent Title: Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
- Patent Title (中): 通过选择性外延生长制造垂直于（001）取向衬底的光学质量面
-
Application No.: US11326431Application Date: 2006-01-06
-
Publication No.: US07432161B2Publication Date: 2008-10-07
- Inventor: Seung-Chang Lee , Steven R. J. Brueck
- Applicant: Seung-Chang Lee , Steven R. J. Brueck
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.
Public/Granted literature
Information query
IPC分类:
