发明授权
- 专利标题: FinFET device with multiple channels
- 专利标题(中): FinFET器件具有多个通道
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申请号: US10755344申请日: 2004-01-13
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公开(公告)号: US07432557B1公开(公告)日: 2008-10-07
- 发明人: Matthew S. Buynoski , Judy Xilin An , Bin Yu
- 申请人: Matthew S. Buynoski , Judy Xilin An , Bin Yu
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Harrity Snyder, LLP
- 主分类号: H01L23/62
- IPC分类号: H01L23/62
摘要:
A method for forming one or more FinFET devices includes forming a source region and a drain region in an oxide layer, where the oxide layer is disposed on a substrate, and etching the oxide layer between the source region and the drain region to form a group of oxide walls and channels for a first device. The method further includes depositing a connector material over the oxide walls and channels for the first device, forming a gate mask for the first device, removing the connector material from the channels, depositing channel material in the channels for the first device, forming a gate dielectric for first device over the channels, depositing a gate material over the gate dielectric for the first device, and patterning and etching the gate material to form at least one gate electrode for the first device.