发明授权
US07432558B1 Formation of semiconductor devices to achieve <100> channel orientation
有权
形成半导体器件实现<100>通道方向
- 专利标题: Formation of semiconductor devices to achieve <100> channel orientation
- 专利标题(中): 形成半导体器件实现<100>通道方向
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申请号: US10863392申请日: 2004-06-09
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公开(公告)号: US07432558B1公开(公告)日: 2008-10-07
- 发明人: Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Bin Yu
- 申请人: Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Bin Yu
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Harrity Snyder, LLP
- 主分类号: H01L29/72
- IPC分类号: H01L29/72
摘要:
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A fin may be formed on the insulating layer. The fin may include a side surface and a top surface, and the side surface may have a orientation. A first gate may be formed on the insulating layer proximate to the side surface of the fin.