发明授权
US07432785B2 Thin film resonator, method for making thin film resonator and filter having thin film resonators
有权
薄膜谐振器，制造薄膜谐振器的方法和具有薄膜谐振器的滤波器
- 专利标题： Thin film resonator, method for making thin film resonator and filter having thin film resonators
- 专利标题（中）： 薄膜谐振器，制造薄膜谐振器的方法和具有薄膜谐振器的滤波器
-
申请号： US10936522申请日： 2004-09-09
-
公开(公告)号： US07432785B2公开(公告)日： 2008-10-07
- 发明人: Yong-seop Yoon , Yun-kwon Park , Hyung Choi
- 申请人： Yong-seop Yoon , Yun-kwon Park , Hyung Choi
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2003-0063389 20030909
- 主分类号： H03H9/00
- IPC分类号： H03H9/00 ; H03H9/09 ; H03H9/54
摘要：
A thin film resonator having a membrane layer formed on top of a substrate, a lower electrode formed on part of the top surface of the membrane layer, a piezoelectric layer formed on top of the lower electrode, an upper electrode formed on top of the piezoelectric layer, and a mass loading layer interposed between the lower electrode and the membrane layer and having a predetermined mass. This structure enables precise adjustment of the resonant frequency of the thin film resonator, thereby providing a more precise filter.
公开/授权文献
信息查询
