发明授权
- 专利标题: Vertical-cavity surface emitting laser
- 专利标题(中): 垂直腔表面发射激光
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申请号: US11584987申请日: 2006-10-23
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公开(公告)号: US07433379B2公开(公告)日: 2008-10-07
- 发明人: Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
- 申请人: Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
- 申请人地址: KR Maetan-Dong, Yeongtong-Gu, Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Maetan-Dong, Yeongtong-Gu, Suwon-Si, Gyeonggi-Do
- 代理机构: Cha & Reiter, LLC
- 优先权: KR10-2006-0012621 20060209
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A vertical-cavity surface emitting laser includes a substrate and a first mirror that is grown on the substrate, a second mirror grown on the first mirror for resonating the first mirror and light, an active layer between the first mirror and the second mirror for generating and amplifying the light, an upper electrode grown on the active layer and a lower electrode formed on the first mirror for supplying current to the active layer, a planarizing polymer formed on the first mirror for burying the active layer and the second layer, and a first external terminal extending from the upper electrode in a vertical upward direction to be exposed to the top surface of the planarizing polymer and a second external terminal extending from the lower electrode to expose its one surface to the top surface of the planarizing polymer.
公开/授权文献
- US20070183472A1 Vertical-cavity surface emitting laser 公开/授权日:2007-08-09
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