发明授权
- 专利标题： High blocking semiconductor component comprising a drift section
- 专利标题（中）： 高阻塞半导体元件包括漂移部分
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申请号： US11464004申请日： 2006-08-11
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公开(公告)号： US07436023B2公开(公告)日： 2008-10-14
- 发明人: Franz Hirler , Anton Mauder , Frank Pfirsch
- 申请人： Franz Hirler , Anton Mauder , Frank Pfirsch
- 申请人地址： DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE
- 代理机构： Coats & Bennett, P.L.L.C.
- 优先权： DE102004007197 20040213
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).
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