发明授权
- 专利标题： Strained MOSFETs on separated silicon layers
- 专利标题（中）： 分离的硅层上的应变MOSFET
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申请号： US11463640申请日： 2006-08-10
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公开(公告)号： US07436030B2公开(公告)日： 2008-10-14
- 发明人: Haining Yang , Thomas W. Dyer , Wai-Kin Li
- 申请人： Haining Yang , Thomas W. Dyer , Wai-Kin Li
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/336
摘要：
A method of fabricating and a structure of an IC incorporating strained MOSFETs on separated silicon layers are disclosed. N-channel field effect transistors (nFET) and P-channel FETs (pFET) are formed on the separated silicon layers, respectively. Shallow trench insulation (STI) regions adjacent to the nFETs and pFETs thus can be formed to induce different stress to the channel regions of the respective nFETs and pFETs. As a consequence, performance of both the nFETs and the pFETs can be improved by the STI stress. In addition, the area of the IC can also be reduced as the two silicon layers are positioned vertically relative to one another.
公开/授权文献
- US20080036012A1 STRAINED MOSFETS ON SEPARATED SILICON LAYERS 公开/授权日：2008-02-14
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