发明授权
- 专利标题: Magnetoresistive sensor having an improved pinning structure
- 专利标题(中): 具有改进的钉扎结构的磁阻传感器
-
申请号: US11244675申请日: 2005-10-05
-
公开(公告)号: US07436637B2公开(公告)日: 2008-10-14
- 发明人: Mustafa Michael Pinarbasi
- 申请人: Mustafa Michael Pinarbasi
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/33
- IPC分类号: G11B5/33
摘要:
A magnetoresistive sensor having a hard magnetic layer extending from the stripe height of the pinned layer to assist in pinning the pinned layer. The pinned layer extends beyond the stripe height of the free layer so that the back stripe height edge of the pinned layer is significantly beyond the stripe height edge of the free layer. The pinned layer is preferably constructed to have a net magnetic moment such that magnetostatic coupling between the hard magnetic layer and the pinned layer pins the moment of the layers. The hard magnetic layer can be used in addition to or in lieu of an AFM pinning layer.
公开/授权文献
信息查询
IPC分类: