发明授权
US07436638B1 Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direction 有权
铁磁钉扎结构包括反铁磁耦合到钉扎层的第一部分和在条带高度方向上相对于第一部分细长的第二部分

  • 专利标题: Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direction
  • 专利标题(中): 铁磁钉扎结构包括反铁磁耦合到钉扎层的第一部分和在条带高度方向上相对于第一部分细长的第二部分
  • 申请号: US11856861
    申请日: 2007-09-18
  • 公开(公告)号: US07436638B1
    公开(公告)日: 2008-10-14
  • 发明人: Tao Pan
  • 申请人: Tao Pan
  • 申请人地址: US CA Fremont
  • 专利权人: Western Digital (Fremont), LLC
  • 当前专利权人: Western Digital (Fremont), LLC
  • 当前专利权人地址: US CA Fremont
  • 代理商 Jonathan E. Prejean, Esq.
  • 主分类号: G11B5/39
  • IPC分类号: G11B5/39
Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direction
摘要:
A CPP magnetic sensor is disclosed with a ferromagnetic layer that extends in a first direction a first distance; a nonferromagnetic spacer layer that adjoins the ferromagnetic layer and extends in the first direction a second distance that is substantially equal to the first distance; and a ferromagnetic structure that is separated from the ferromagnetic layer by the spacer layer, the ferromagnetic structure having a first section that extends in the first direction a third distance that is substantially equal to the second distance, the ferromagnetic structure having a second section that is disposed further than the first section from the spacer layer, the second section extending at least twice as far as the first section in the first direction. The ferromagnetic structure can be used for in-stack bias or pinning of free or pinned layers, respectively, and side shields can be provided for high areal density.
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