发明授权
US07439108B2 Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same
有权
具有不同晶体取向的共面绝缘体上硅（SOI）区域及其制造方法
- 专利标题： Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same
- 专利标题（中）： 具有不同晶体取向的共面绝缘体上硅（SOI）区域及其制造方法
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申请号： US11155030申请日： 2005-06-16
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公开(公告)号： US07439108B2公开(公告)日： 2008-10-21
- 发明人: Louis Lu-Chen Hsu , Jack A. Mandelman
- 申请人： Louis Lu-Chen Hsu , Jack A. Mandelman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Dugan & Dugan
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator (SOI) region having a first crystal orientation, a second SOI region having a second crystal orientation and a third SOI region having a third crystal orientation on the substrate. The first, second and third SOI regions are coplanar. Numerous other aspects are provided.
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