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US07439536B2 Phase change memory cell with tubular heater and manufacturing method thereof 有权
具有管状加热器的相变存储单元及其制造方法

Phase change memory cell with tubular heater and manufacturing method thereof
摘要：
A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heating element. The contact area is in the form of a frame that has a width of sublithographic extent and, preferably, a sublithographic maximum external dimension. The heating element includes a hollow elongated portion which is arranged in contact with the phase change region.
摘要（中）：

相变存储单元包括相变材料的相变区域，与该相变区域接触的电阻材料的加热元件，以及形成在与该加热元件的接触区域的所述相变区域中的存储元件 。 接触区域是具有亚光刻范围宽度的框架形式，最好是亚光刻最大外部尺寸。 加热元件包括与相变区域接触地布置的中空细长部分。

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