发明授权
US07439599B2 PIN photodiode structure and fabrication process for reducing dielectric delamination
有权
PIN光电二极管结构和减少介电分层的制造工艺
- 专利标题： PIN photodiode structure and fabrication process for reducing dielectric delamination
- 专利标题（中）： PIN光电二极管结构和减少介电分层的制造工艺
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申请号： US11079708申请日： 2005-03-14
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公开(公告)号： US07439599B2公开(公告)日： 2008-10-21
- 发明人: Xiang Gao , Alex Ceruzzi , Steve Schwed , Linlin Liu , Mark Gottfried
- 申请人： Xiang Gao , Alex Ceruzzi , Steve Schwed , Linlin Liu , Mark Gottfried
- 申请人地址： US NM Albuquerque
- 专利权人： Emcore Corporation
- 当前专利权人： Emcore Corporation
- 当前专利权人地址： US NM Albuquerque
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.
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