发明授权
- 专利标题: Semiconductor device including a high voltage generation circuit and method of generating a high voltage
- 专利标题(中): 包括高电压产生电路的半导体器件和产生高电压的方法
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申请号: US11605223申请日: 2006-11-29
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公开(公告)号: US07439797B2公开(公告)日: 2008-10-21
- 发明人: Dae-Seok Byeon , Dong-Hyuk Chae
- 申请人: Dae-Seok Byeon , Dong-Hyuk Chae
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2006-0094799 20060928
- 主分类号: G05F1/46
- IPC分类号: G05F1/46
摘要:
A semiconductor memory device includes a first pump clock generator configured to generate a first pump clock signal based on a power supply voltage. The device also includes a first charge pump configured to generate a first pump output voltage in response to the first pump clock signal. The device also includes a second pump clock generator configured to generate a second pump clock signal based on the first pump output voltage. The device also includes a second charge pump configured to generate a second pump output voltage in response to the second pump clock signal. The device also includes a switching unit configured to selectively connect the first charge pump to the second charge pump.
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