发明授权
- 专利标题: Ferroelectric information storage device and method of writing/reading information
- 专利标题(中): 铁电信息存储装置及信息读写方法
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申请号: US11500890申请日: 2006-08-09
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公开(公告)号: US07440302B2公开(公告)日: 2008-10-21
- 发明人: Seung-bum Hong , Jin-gyoo Yoo , Ju-hwan Jung , Simon Buehlmann
- 申请人: Seung-bum Hong , Jin-gyoo Yoo , Ju-hwan Jung , Simon Buehlmann
- 申请人地址: KR Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2005-0081318 20050901
- 主分类号: G11C11/18
- IPC分类号: G11C11/18 ; G11C11/00 ; G11C11/14 ; G11C11/15
摘要:
An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.
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