发明授权
- 专利标题： Nitride-encapsulated FET (NNCFET)
- 专利标题（中）： 氮化物封装的FET（NNCFET）
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申请号： US11481532申请日： 2006-07-06
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公开(公告)号： US07442612B2公开(公告)日： 2008-10-28
- 发明人: Kevin K. Chan , Hussein I. Hanafi , Paul M. Solomon
- 申请人： Kevin K. Chan , Hussein I. Hanafi , Paul M. Solomon
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ido Tuchman, Esq.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. In the present invention, self-aligned isolation regions are provided to reduce the parasitic capacitance in the DGFET structure. Additionally, the present invention encapsulates the silicon-containing channel layer to enable the back-gate to be oxidized to a greater extent thereby reducing the parasitic capacitance of the structure even further.
公开/授权文献
- US20060252241A1 Nitride-encapsulated FET (NNCFET) 公开/授权日：2006-11-09
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