发明授权
- 专利标题： Method of forming a penetration electrode and substrate having a penetration electrode
- 专利标题（中）： 形成具有穿透电极的穿透电极和基板的方法
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申请号： US11447257申请日： 2006-06-06
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公开(公告)号： US07443035B2公开(公告)日： 2008-10-28
- 发明人: Satoshi Yamamoto , Takashi Takizawa
- 申请人： Satoshi Yamamoto , Takashi Takizawa
- 申请人地址： JP Tokyo
- 专利权人： Fujikura Ltd.
- 当前专利权人： Fujikura Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2002-370201 20021220
- 主分类号： H01L23/34
- IPC分类号： H01L23/34
摘要：
A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.