Invention Grant
- Patent Title: Leakage current prevention circuit
- Patent Title (中): 漏电流防止电路
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Application No.: US11560855Application Date: 2006-11-17
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Publication No.: US07443228B2Publication Date: 2008-10-28
- Inventor: Yong-Zhao Huang
- Applicant: Yong-Zhao Huang
- Applicant Address: CN Shenzhen, Guangdong Province TW Tu-Cheng, Taipei Hsien
- Assignee: Hong Fu Jin Precision Industry (Shen Zhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hong Fu Jin Precision Industry (Shen Zhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong Province TW Tu-Cheng, Taipei Hsien
- Agent Wei Te Chung
- Priority: CN200610062821 20060927
- Main IPC: H11C5/14
- IPC: H11C5/14

Abstract:
A leakage current prevention circuit for preventing a power source from being affected by leakage current includes a first transistor, and a second transistor. A gate of the first transistor receives a control signal and a source of the first transistor is grounded. A gate of the second transistor is connected to a drain of the first transistor, a drain of the second transistor is electrically connected to the power source, and a source of the second transistor is connected to a pull-up circuit which is connected to a chipset. When the chipset receives a drive signal, the control signal controls status of the first and second transistors so that the power source provides voltage to the pull-up circuit for the drive signal.
Public/Granted literature
- US20080074175A1 LEAKAGE CURRENT PREVENTION CIRCUIT Public/Granted day:2008-03-27
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