发明授权
US07443561B2 Deep quantum well electro-absorption modulator 失效
深量子阱电吸收调制器

Deep quantum well electro-absorption modulator
摘要:
Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
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